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IPB027N10N3GXT Datasheet, PDF

  • Manufacturer model: IPB027N10N3GXT
  • Function description: Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
  • Manufacturer: Infineon Technologies AG
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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    IPB027N10N3GXT Similar Part

    • IPB027N10N3GXT Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG 5302 0

    IPB027N10N3GXT Chip related model

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    IPB027N10N3GXT Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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