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IPB017N10N5 Datasheet, PDF

  • Manufacturer model: IPB017N10N5
  • Function description: Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
  • Manufacturer: Infineon Technologies AG
  • Data sheet:
  • Category: Power Field-Effect Transistors

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IPB017N10N5 Similar Part

  • IPB017N10N5 infineon 13741 7.28
  • IPB017N10N5 Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6 Infineon Technologies AG 5300 35.6362
  • IPB017N10N5LFATMA1 MOSFET N-CH 100V 180A TO263-7 Infineon Technologies 16794 10.33
  • IPB017N10N5ATMA1 MOSFET N-Ch 100V 180A D2PAK-2 Infineon Technologies 11665 7.57
  • IPB017N10N5ATMA1 MOSFET N-CH 100V 180A TO263-7 Infineon Technologies 6969 8.29
  • IPB017N10N5LF infineon 13747 8.69
  • IPB017N10N5LF Combining a low RDS(on) with a wide safe operating area (SOA) 英飞凌-Infineon 20828 0

IPB017N10N5 Chip related model

IPB017N10N5 Alternate Parts

IPB017N10N5ATMA1 STH240N10F7-2 STP315N10F7 STH240N10F7-6 STH315N10F7-6 STH315N10F7-2

IPB017N10N5 Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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