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FQI10N20L Datasheet, PDF

  • Manufacturer model: FQI10N20L
  • Function description: Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
  • Manufacturer: Fairchild Semiconductor Corporation
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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FQI10N20L Similar Part

  • FQI10N20L Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation 12060 0
  • FQI10N20LTU Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation 5759 0

FQI10N20L Chip related model

FQI10N20L Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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