FQD11P06 IC Information manufacturer Fairchild Semiconductor Corporation

Manufacturer model: FQD11P06
Function description: Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Manufacturer: Fairchild Semiconductor Corporation
Data sheet:
Category: Power Field-Effect Transistors

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FQD11P06TM MOSFET P-CH 60V 9.4A DPAK onsemi 5429 1.19
FQD11P06 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 6061 0
FQD11P06TM 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 Rochester Electronics LLC 6077 1.25
FQD11P06TM Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation 6079 1.25
FQD11P06 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 3792 0
FQD11P06TF Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation 3804 0
FQD11P06TM Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, 2500-REEL ON Semiconductor 13345 1.25
FQD11P06TM Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK, 2500-REEL ON Semiconductor 3783 8.9749
FQD11P06TF MOSFET P-CH 60V 9.4A DPAK onsemi 5428 0
FQD11P06TM 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 Rochester Electronics LLC 5285 1.25