FQB34N20TM_AM002 IC Information manufacturer onsemi

Manufacturer model: FQB34N20TM_AM002
Function description: N-Channel QFET® MOSFET 200V, 31A, 75mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL
Manufacturer: onsemi
Data sheet:
Category: Power Field-Effect Transistors

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FQB34N20LTM Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation 18333 2.53
FQB34N20TM-AM002 MOSFET N-CH 200V 31A D2PAK onsemi 58810 0
FQB34N20LTM MOSFET N-CH 200V 31A D2PAK onsemi 3423 3.76
FQB34N20TM N-CHANNEL POWER MOSFET Fairchild Semiconductor 496 2.51
FQB34N20TM Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation 2826 0
FQB34N20TM Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild 2855 0
FQB34N20LTM Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild 6001 2.53
FQB34N20L Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation 6027 0
FQB34N20TM_AM002 Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation 6030 2.47
FQB34N20TM 31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 Rochester Electronics LLC 12186 0