Function description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Manufacturer:FUJITSU Limited
Data sheet:
Category:RF Power Field-Effect Transistors
FLM7177-4D Suppliers
No Date
FLM7177-4D Similar Part
FLM7177-4D
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU Limited
17313
0
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