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FLM1314-12F Datasheet, PDF

  • Manufacturer model: FLM1314-12F
  • Function description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
  • Manufacturer: FUJITSU Limited
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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    FLM1314-12F Similar Part

    • FLM1314-12F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited 17311 0
    • FLM1314-12F KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Semiconductor Limited 13693 0

    FLM1314-12F Chip related model

    FLM1314-12F Alternate Parts

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    FLM1314-12F Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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